Joyce, Hannah J; Gao, Qiang; Wong-Leung, Yin-Yin (Jennifer); Kim, Yong; Tan, Hoe Hark; Jagadish, Chennupati
GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.