Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells
The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnO∕ZnMgOmultiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Wen_Temperature_dependent_2007.pdf||Published Version||330.14 kB||Adobe PDF|
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