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Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

Lu, Hao Feng; Fu, Lan; Jolley, Greg; Tan, Hark Hoe; Tatavarti, Sudersena Rao; Jagadish, Chennupati


Self-assembledIn₀.₅Ga₀.₅As/GaAsquantum dotsolar cell (QDSC) was grown by metal organic chemical vapor deposition. Systematic measurements of dark current versus voltage (I-V) characteristics were carried out from 30 to 310 K. Compared with the reference GaAssolar cell, the QDSC exhibits larger dark current however its ideality factor (n) was smaller, which cannot be straightly interpreted by the conventional diode models. These results are important for the fundamental understanding of QDSC...[Show more]

CollectionsANU Research Publications
Date published: 2011-05-06
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.3586251


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