Browsing by Author Nandi, Sanjoy
Showing results 6 to 13 of 13
Oxygen Self-Diffusion in HfO 2 Studied by Electron Spectroscopy
Author(s) | Vos, Maarten; Grande, Pedro; Venkatachalam, Dinesh, et al |
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Type | Journal article |
Date Published | 2014 |
Date Created | - |
Reduced threshold current in NbO 2 selector by engineering device structure
Author(s) | Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh, et al |
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Type | Journal article |
Date Published | 2014 |
Date Created | - |
Resistive Switching Behavior in HfO 2 with Nb as an Oxygen Exchange Layer
Author(s) | Nandi, Sanjoy; Liu, Xinjun; Li, Shuai, et al |
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Type | Conference paper |
Date Published | 2014 |
Date Created | December 14-17 2014 |
Self-assembly of an NbO<inf>2</inf> interlayer and configurable resistive switching in Pt/Nb/HfO<inf>2</inf>/Pt structures
Author(s) | Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh, et al |
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Type | Journal article |
Date Published | 2015 |
Date Created | - |
Temperature Dependence of Threshold Switching in NbOx Thin Films
Author(s) | Li, Shuai; Liu, Xinjun; Nandi, Sanjoy, et al |
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Type | Conference paper |
Date Published | 2014 |
Date Created | December 14-17 2014 |
The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO x films
Author(s) | Vos, Maarten; Liu, Xinjun; Grande, Pedro, et al |
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Type | Journal article |
Date Published | 2014 |
Date Created | - |
Threshold current reduction for the metal-insulator transition in NbO<inf>2-x</inf>-selector devices: The effect of ReRAM integration
Author(s) | Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh, et al |
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Type | Journal article |
Date Published | 2015 |
Date Created | - |
Threshold switching and electrical self-oscillation in niobium oxide films
Author(s) | Liu, Xinjun; Li, Shuai (Jack); Nandi, Sanjoy, et al |
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Type | Journal article |
Date Published | 2016 |
Date Created | - |
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