Self-assembly of an NbO
2 interlayer and configurable resistive switching in Pt/Nb/HfO 2/Pt structures
A configurable resistive switching response is reported for Pt/Nb/HfO<inf>2</inf>/Pt devices subjected to different set compliance currents. When operated at a low compliance-current (∼100 μA), devices show uniform bipolar resistive switching behavior. As the compliance current is increased (∼500 μA), the switching mode changes to integrated threshold-resistive (1S1M) switching, and at still higher currents (∼1 mA), it changes to symmetric threshold switching (1S) characteristic of threshold...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Access Rights:||Open Access|
|01_Nandi_Self-assembly_of_an_2015.pdf||1.17 MB||Adobe PDF|
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