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Self-assembly of an NbO2 interlayer and configurable resistive switching in Pt/Nb/HfO2/Pt structures

Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh; Elliman, Robert


A configurable resistive switching response is reported for Pt/Nb/HfO<inf>2</inf>/Pt devices subjected to different set compliance currents. When operated at a low compliance-current (∼100 μA), devices show uniform bipolar resistive switching behavior. As the compliance current is increased (∼500 μA), the switching mode changes to integrated threshold-resistive (1S1M) switching, and at still higher currents (∼1 mA), it changes to symmetric threshold switching (1S) characteristic of threshold...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4932096
Access Rights: Open Access


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