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Reduced threshold current in NbO 2 selector by engineering device structure

Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh; Belay, Kidane; Song, Sannian; Elliman, Robert


The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ∼2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show t

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2014.2344105


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