Reduced threshold current in NbO 2 selector by engineering device structure
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Altmetric Citations
Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh; Belay, Kidane; Song, Sannian; Elliman, Robert
Description
The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ∼2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show t
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2014 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/75571 |
| Source: | IEEE Electron Device Letters |
| DOI: | 10.1109/LED.2014.2344105 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Liu_Reduced_threshold_current_in_2014.pdf | 805.32 kB | Adobe PDF | Request a copy |
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