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Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices: The effect of ReRAM integration

Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh; Elliman, Robert


The threshold current for inducing the metal-insulator transition in a NbO2-x selector element is shown to be affected by the properties of an adjacent memory element when integrated into a hybrid selector-memory device structure. Experimental

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/48/19/195105


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