Threshold current reduction for the metal-insulator transition in NbO2-x -selector devices: The effect of ReRAM integration
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Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh; Elliman, Robert
Description
The threshold current for inducing the metal-insulator transition in a NbO
Collections | ANU Research Publications |
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Date published: | 2015 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/70857 |
Source: | Journal of Physics D: Applied Physics |
DOI: | 10.1088/0022-3727/48/19/195105 |
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File | Description | Size | Format | Image |
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01_Nandi_Threshold_current_reduction_2015.pdf | 2.04 MB | Adobe PDF | Request a copy |
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