The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO x films
Electrons scattered over large angles at relatively high energies (40 keV) are used to study NbOx films. These films were deposited by reactive sputter deposition on a Si substrate using a Nb target and an Ar/O2 gas mixture. Energy spectra of electrons scattered from such samples exhibit elastic scattering peaks for each component due to the energy difference associated with scattering from different masses. The spectra provide in this way information about the film thickness as well as its...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Vos_The_use_of_electron_Rutherford_2014.pdf||1.26 MB||Adobe PDF||Request a copy|
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