Li, Shuai; Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh; Elliman, Robert
The threshold switching characteristics of amorphous NbO<inf>x</inf> thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the...[Show more]
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