Nandi, Sanjoy; Liu, Xinjun; Li, Shuai; Venkatachalam, Dinesh; Belay, Kidane; Elliman, Robert
The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.
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