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Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure

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dc.contributor.authorJin, Hao
dc.contributor.authorWeber, Klaus
dc.coverage.spatialValencia Spain
dc.date.accessioned2015-12-08T22:25:34Z
dc.date.createdSeptember 1-4 2008
dc.date.issued2008
dc.date.updated2015-12-08T09:07:03Z
dc.identifier.urihttp://hdl.handle.net/1885/33493
dc.publisherConference Organising Committee
dc.relation.ispartofseriesEuropean Photovoltaic Solar Energy Conference 2008
dc.sourceProceedings of the European Photovoltaic Solar Energy Conference 2008
dc.titleRelationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure
dc.typeConference paper
local.bibliographicCitation.lastpage247
local.bibliographicCitation.startpage244
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.authoruidJin, Hao, u4065013
local.contributor.authoruidWeber, Klaus, u9116880
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationu9606031xPUB102
local.type.statusPublished Version

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