Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure

Jin, Hao; Weber, Klaus

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Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure

Date

2008

Authors

Jin, Hao

Weber, Klaus

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Conference Organising Committee

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http://hdl.handle.net/1885/33493

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ANU Research Publications

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Proceedings of the European Photovoltaic Solar Energy Conference 2008

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Conference paper

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2037-12-31

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Relationship between interface defect density and surface recombination velocity in (111) and (100) Silicon / Silicon Oxide structure

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