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Lift-off protocols for thin films for use in EXAFS experiments

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dc.contributor.authorDecoster, Stefan
dc.contributor.authorGlover, C J
dc.contributor.authorJohannessen, B
dc.contributor.authorGiulian, R
dc.contributor.authorSprouster, David
dc.contributor.authorKluth, Patrick
dc.contributor.authorAraujo, L L
dc.contributor.authorHussain, Zohair
dc.contributor.authorSchnohr, Claudia
dc.contributor.authorSalama, Hazar
dc.contributor.authorKremer, Felipe
dc.contributor.authorTemst, K.
dc.contributor.authorVantomme, A
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T22:22:57Z
dc.date.issued2013
dc.date.updated2016-02-24T09:08:52Z
dc.description.abstractLift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality mic
dc.identifier.issn0909-0495
dc.identifier.urihttp://hdl.handle.net/1885/72527
dc.publisherMunksgaard International Publishers
dc.sourceJournal of Synchrotron Radiation
dc.subjectKeywords: EXAFS; Experimental techniques; Extended X-ray absorption fine structure measurements; lift-off; Lift-off procedures; Sample preparation methods; Sample preparation procedure; Small angle X-ray scattering; Amorphous semiconductors; Dielectric materials; E dielectric; EXAFS; lift-off; semiconductor; thin film
dc.titleLift-off protocols for thin films for use in EXAFS experiments
dc.typeJournal article
local.bibliographicCitation.issue3
local.bibliographicCitation.lastpage432
local.bibliographicCitation.startpage426
local.contributor.affiliationDecoster, Stefan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, C J, Australian Synchrotron
local.contributor.affiliationJohannessen, B, Australian Synchrotron
local.contributor.affiliationGiulian, R, Universidade Federal do Rio Grande do Sul
local.contributor.affiliationSprouster, David, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKluth, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationAraujo, L L, Universidade Federal do Rio Grande do Sul
local.contributor.affiliationHussain, Z S, CSIRO Process Science and Engineering
local.contributor.affiliationSchnohr, Claudia, Friedrich Schiller University
local.contributor.affiliationSalama, Hazar, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKremer, Felipe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTemst, K., Instituut voor Kern-en Stralingsfysica
local.contributor.affiliationVantomme, A, Catholic University of Leuven
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidDecoster, Stefan, u4976623
local.contributor.authoruidSprouster, David, u4301091
local.contributor.authoruidKluth, Patrick, u4054452
local.contributor.authoruidSalama, Hazar, u5075039
local.contributor.authoruidKremer, Felipe, u5077096
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB3292
local.identifier.citationvolume20
local.identifier.doi10.1107/S0909049513005049
local.identifier.scopusID2-s2.0-84876513982
local.identifier.thomsonID000317604800005
local.type.statusPublished Version

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