Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires
| dc.contributor.author | Titova, L. V. | en_AU |
| dc.contributor.author | Hoang, Thang B. | en_AU |
| dc.contributor.author | Jackson, H. E. | en_AU |
| dc.contributor.author | Smith, L. M. | en_AU |
| dc.contributor.author | Yarrison-Rice, J. M. | en_AU |
| dc.contributor.author | Kim, Y. | en_AU |
| dc.contributor.author | Joyce, H. J. | en_AU |
| dc.contributor.author | Jagadish, C. | en_AU |
| dc.contributor.author | Tan, Hark Hoe | en_AU |
| dc.date.accessioned | 2015-11-03T00:23:25Z | |
| dc.date.available | 2015-11-03T00:23:25Z | |
| dc.date.issued | 2006-10-26 | |
| dc.date.updated | 2015-12-08T03:09:48Z | |
| dc.description.abstract | Temperature-dependent polarized microphotoluminescencemeasurements of single GaAs∕AlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAsnanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependentband gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120K, with an activation energy of 17meV reflecting the presence of nonradiative defects. | |
| dc.description.sponsorship | This work was supported by the University of Cincinnati. Australian authors gratefully acknowledge the financial support from the Australian Research Council. | en_AU |
| dc.identifier.issn | 0003-6951 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/16215 | |
| dc.publisher | American Institute of Physics (AIP) | |
| dc.rights | http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/11/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2364885 | |
| dc.source | Applied Physics Letters | |
| dc.subject | Keywords: Activation energy; Dielectric properties; Nanostructured materials; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Band gap; Dielectric mismatch; Low-temperature emission; Photoluminescence | |
| dc.title | Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires | |
| dc.type | Journal article | |
| local.bibliographicCitation.issue | 17 | en_AU |
| local.bibliographicCitation.startpage | 173126 | en_AU |
| local.contributor.affiliation | Titova, Lyubov V , University of Cincinnati, United States of America | en_AU |
| local.contributor.affiliation | Hoang, Thang B , University of Cincinnati, United States of America | en_AU |
| local.contributor.affiliation | Jackson, Howard E , University of Cincinnati, United States of America | en_AU |
| local.contributor.affiliation | Smith, Leigh M , University of Cincinnati, United States of America | en_AU |
| local.contributor.affiliation | Yarrison-Rice, Jan M , University of Miami, United States of America | en_AU |
| local.contributor.affiliation | Kim, Yong, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Joyce, Hannah J, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoruid | u9302338 | en_AU |
| local.description.notes | Imported from ARIES | en_AU |
| local.identifier.absfor | 100799 | en_AU |
| local.identifier.absfor | 020501 | en_AU |
| local.identifier.ariespublication | u4047546xPUB17 | en_AU |
| local.identifier.citationvolume | 89 | en_AU |
| local.identifier.doi | 10.1063/1.2364885 | en_AU |
| local.identifier.scopusID | 2-s2.0-33750436198 | |
| local.publisher.url | https://www.aip.org/ | en_AU |
| local.type.status | Published Version | en_AU |