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Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires

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Date

2006-10-26

Authors

Titova, L. V.
Hoang, Thang B.
Jackson, H. E.
Smith, L. M.
Yarrison-Rice, J. M.
Kim, Y.
Joyce, H. J.
Jagadish, C.
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Temperature-dependent polarized microphotoluminescencemeasurements of single GaAs∕AlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAsnanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependentband gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120K, with an activation energy of 17meV reflecting the presence of nonradiative defects.

Description

Keywords

Keywords: Activation energy; Dielectric properties; Nanostructured materials; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Band gap; Dielectric mismatch; Low-temperature emission; Photoluminescence

Citation

URI

http://hdl.handle.net/1885/16215

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.2364885

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