Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers

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dc.contributor.authorStewart Sears, Kalistaen_AU
dc.contributor.authorBuda, Manuelaen_AU
dc.contributor.authorWong-Leung, Jenniferen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialBrisbane Australia
dc.date.accessioned2015-12-07T22:51:02Z
dc.date.createdJuly 3-7 2006
dc.date.issued2006
dc.date.updated2015-12-07T12:24:00Z
dc.description.abstractThis paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.
dc.identifier.isbn1424404533
dc.identifier.urihttp://hdl.handle.net/1885/27276
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesInternational Conference on Nanoscience and Nanotechnology (ICONN 2006)
dc.sourceProceedings of the 2006 International Conference on Nanoscience and Nanotechnology
dc.subjectKeywords: Chemical vapor deposition; Ion beam assisted deposition; Lasers; Metallizing; Metals; Nanoscience; Nanotechnology; Optical waveguides; Organic chemicals; Organic compounds; Organometallics; Quantum electronics; Cavity lengths; Diode lasers; Inas/gaas quan InAs/GaAs; Laser; MOCVD; Quantum dots
dc.titleGrowth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
dc.typeConference paper
local.bibliographicCitation.lastpage508
local.bibliographicCitation.startpage505
local.contributor.affiliationStewart Sears, Kalista, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidStewart Sears, Kalista, u4003253
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidBuda, Manuela, u4012377
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationU4047546xPUB50
local.identifier.doi10.1109/ICONN.2006.340664
local.identifier.scopusID2-s2.0-48749089698
local.type.statusPublished Version

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