Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers
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Stewart Sears, Kalista
Buda, Manuela
Wong-Leung, Jennifer
Jagadish, Chennupati
Tan, Hark Hoe
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.
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Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology
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Restricted until
2037-12-31