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Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers

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Authors

Stewart Sears, Kalista
Buda, Manuela
Wong-Leung, Jennifer
Jagadish, Chennupati
Tan, Hark Hoe

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Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

Description

Citation

Source

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology

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Access Statement

License Rights

Restricted until

2037-12-31
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