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Voids and Nanocavities in Silicon

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dc.contributor.authorWilliams, James
dc.contributor.authorWong-Leung, Jennifer
dc.date.accessioned2015-12-10T22:21:52Z
dc.date.issued2010
dc.date.updated2015-12-09T08:58:29Z
dc.description.abstractIn silicon, defects that are normally observed following ion implantation and annealing are interstitial based, that is they arise from the agglomeration of interstitials that are produced during ion irradiation. Vacancies that are produced in equal numbe
dc.identifier.isbn9783540887881
dc.identifier.urihttp://hdl.handle.net/1885/52405
dc.publisherSpringer
dc.relation.ispartofTopics in Applied Physics 116: Materials Science with Ion Beams
dc.relation.isversionof1st Edition
dc.titleVoids and Nanocavities in Silicon
dc.typeBook chapter
local.bibliographicCitation.lastpage146
local.bibliographicCitation.placeofpublicationBerlin
local.bibliographicCitation.startpage113
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidWilliams, James, u8809701
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationU3488905xPUB246
local.identifier.doi10.1007/978-3-540-88789-8_5
local.identifier.scopusID2-s2.0-84883194651
local.type.statusPublished Version

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