Voids and Nanocavities in Silicon
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Williams, James
Wong-Leung, Jennifer
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Springer
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In silicon, defects that are normally observed following ion implantation and annealing are interstitial based, that is they arise from the agglomeration of interstitials that are produced during ion irradiation. Vacancies that are produced in equal numbe
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Topics in Applied Physics 116: Materials Science with Ion Beams
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2037-12-31
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