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Voids and Nanocavities in Silicon

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Date

2010

Authors

Williams, James
Wong-Leung, Jennifer

Journal Title

Journal ISSN

Volume Title

Publisher

Springer

Abstract

In silicon, defects that are normally observed following ion implantation and annealing are interstitial based, that is they arise from the agglomeration of interstitials that are produced during ion irradiation. Vacancies that are produced in equal numbe

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/52405

Collections

ANU Research Publications

Source

Type

Book chapter

Book Title

Topics in Applied Physics 116: Materials Science with Ion Beams

Entity type

Access Statement

License Rights

DOI

10.1007/978-3-540-88789-8_5

Restricted until

2037-12-31

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