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Boron diffusion in amorphous silicon-germanium alloys

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Date

2008

Authors

Edelman, L A
Phen, M S
Jones, K S
Elliman, Robert
Rubin, L

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.

Description

Keywords

Keywords: Activation energy; Amorphous alloys; Boron; Charge trapping; Diffusion; Boron diffusion; Transient decay; Silicon alloys

Citation

URI

http://hdl.handle.net/1885/34070

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.2919085

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