Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon

Zhu, Xiaohua; Williams, James; McCallum, J.

Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon

Date

1999

Authors

Zhu, Xiaohua

Williams, James

McCallum, J.

Publisher

Elsevier

Abstract

Ultra-high-dose Si ion implantation (1×1018 cm-2) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford

Keywords

Keywords: Cross-sectional transmission electron microscopy (XTEM); Amorphous films; Amorphous silicon; Crystal defects; Crystalline materials; Crystallization; Epitaxial growth; High temperature effects; Ion bombardment; Ion implantation; Radiation damage; Reaction Amorphous and crystalline silicon; Complex crystal defect; High dose self-implantation; Regrowth

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http://hdl.handle.net/1885/93410

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ANU Research Publications

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Nuclear Instruments and Methods in Physics Research: Section B

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Journal article

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2037-12-31

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Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon

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