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Photoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation

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dc.contributor.authorBaker-Finch, Simeon
dc.contributor.authorMcIntosh, Keith
dc.date.accessioned2015-12-10T23:12:38Z
dc.date.issued2011
dc.date.updated2016-02-24T11:03:49Z
dc.description.abstractPhotoluminescence (PL) imaging identifies contamination occurring in thermal oxidation of p-type crystalline silicon. PL images indicate that the contamination decreases the carrier lifetime from ∼350 to 50 μs and that it is radially symmetric with a d
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/64064
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.subjectKeywords: Crystalline silicons; Cylindrical coordinates; Iron contamination; Lateral Flow; Out-diffusion; P-type; Photoluminescence imaging; PL image; Radially symmetric; Semiconductor equations; Thermal oxidation; Charge carriers; Cleaning; Contamination; Impuriti Charge carriers; cleaning; contamination; photoluminescence imaging; silicon
dc.titlePhotoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpage71
local.bibliographicCitation.startpage66
local.contributor.affiliationBaker-Finch, Simeon, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, PV Lighthouse
local.contributor.authoruidBaker-Finch, Simeon, u3938976
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4334215xPUB882
local.identifier.citationvolume1
local.identifier.doi10.1109/JPHOTOV.2011.2165699
local.identifier.scopusID2-s2.0-84865161387
local.identifier.thomsonID000208697500012
local.type.statusPublished Version

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