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Photoluminescence Imaging Diagnosis of Particulate Iron Contamination Derived From HF Dip and Thermal Oxidation

Date

Authors

Baker-Finch, Simeon

McIntosh, Keith

Publisher

IEEE Electron Devices Society

Abstract

Photoluminescence (PL) imaging identifies contamination occurring in thermal oxidation of p-type crystalline silicon. PL images indicate that the contamination decreases the carrier lifetime from ∼350 to 50 μs and that it is radially symmetric with a d

Keywords

Keywords: Crystalline silicons; Cylindrical coordinates; Iron contamination; Lateral Flow; Out-diffusion; P-type; Photoluminescence imaging; PL image; Radially symmetric; Semiconductor equations; Thermal oxidation; Charge carriers; Cleaning; Contamination; Impuriti Charge carriers; cleaning; contamination; photoluminescence imaging; silicon

URI

http://hdl.handle.net/1885/64064

Collections

ANU Research Publications

Source

IEEE Journal of Photovoltaics

Type

Journal article

DOI

10.1109/JPHOTOV.2011.2165699

Restricted until

2037-12-31

Downloads

File

Description

01_Baker-Finch_Photoluminescence_Imaging_2011.pdf (612.68 KB)