Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Jung, Seungjae; Siddik, Manzar; Lee, Wootae; Park, Jubong; Liu, Xinjun; Woo, Jiyong; Choi, Godeuni; Lee, Joonmyoung; Lee, Nodo; Jang, Yun Hee; Hwang, Hyunsang

Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Date

2011

Authors

Jung, Seungjae

Siddik, Manzar

Lee, Wootae

Park, Jubong

Liu, Xinjun

Woo, Jiyong

Choi, Godeuni

Lee, Joonmyoung

Lee, Nodo

Jang, Yun Hee

Publisher

IEEE

Abstract

We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction [2] and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB) height (Φeff) " provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).