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Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Date

2011

Authors

Jung, Seungjae
Siddik, Manzar
Lee, Wootae
Park, Jubong
Liu, Xinjun
Woo, Jiyong
Choi, Godeuni
Lee, Joonmyoung
Lee, Nodo
Jang, Yun Hee

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction [2] and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB) height (Φeff) " provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).

Description

Keywords

Keywords: High temperature; Large effective; Random access memories; Resistive switching; Retention characteristics; Schottky barriers; Switching speed; Thermal barrier; Thermal insulators; Thermoelectric heaters; Thermoelectric heating; Electron devices; Germanium

Citation

URI

http://hdl.handle.net/1885/65933

Collections

ANU Research Publications

Source

Technical Digest - International Electron Devices Meeting, IEDM

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/IEDM.2011.6131483

Restricted until

2037-12-31

Downloads

File
Description
01_Jung_Thermally-assisted_2011.pdf (807.59 KB)

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