Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

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dc.contributor.authorJung, Seungjae
dc.contributor.authorSiddik, Manzar
dc.contributor.authorLee, Wootae
dc.contributor.authorPark, Jubong
dc.contributor.authorLiu, Xinjun
dc.contributor.authorWoo, Jiyong
dc.contributor.authorChoi, Godeuni
dc.contributor.authorLee, Joonmyoung
dc.contributor.authorLee, Nodo
dc.contributor.authorJang, Yun Hee
dc.contributor.authorHwang, Hyunsang
dc.coverage.spatialWashington, DC
dc.date.accessioned2015-12-10T23:19:29Z
dc.date.createdDecember 5-7 2011
dc.date.issued2011
dc.date.updated2016-02-24T09:57:45Z
dc.description.abstractWe proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction [2] and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB) height (Φeff) " provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).
dc.identifier.isbn9781457705052
dc.identifier.urihttp://hdl.handle.net/1885/65933
dc.publisherIEEE
dc.relation.ispartofseries2011 IEEE International Electron Devices Meeting, IEDM 2011
dc.sourceTechnical Digest - International Electron Devices Meeting, IEDM
dc.subjectKeywords: High temperature; Large effective; Random access memories; Resistive switching; Retention characteristics; Schottky barriers; Switching speed; Thermal barrier; Thermal insulators; Thermoelectric heaters; Thermoelectric heating; Electron devices; Germanium
dc.titleThermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics
dc.typeConference paper
local.bibliographicCitation.lastpage3.6.4
local.bibliographicCitation.startpage3.6.1
local.contributor.affiliationJung, Seungjae, Gwangju Institute of Science and Technology
local.contributor.affiliationSiddik, Manzar, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Wootae, Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Jubong, Gwangju Institute of Science and Technology
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWoo, Jiyong, Gwangju Institute of Science and Technology
local.contributor.affiliationChoi, Godeuni, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Joonmyoung, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Nodo, Gwangju Institute of Science and Technology
local.contributor.affiliationJang, Yun Hee, Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor091205 - Functional Materials
local.identifier.ariespublicationU3488905xPUB1187
local.identifier.doi10.1109/IEDM.2011.6131483
local.identifier.scopusID2-s2.0-84863049811
local.type.statusPublished Version

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