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Integration of Quantum Dot devices by Selective Area Epitaxy

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dc.contributor.authorMokkapati, Sudhaen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorMcBean, K. E.en_AU
dc.contributor.authorPhillips, Matthew R.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialBrisbane Australia
dc.date.accessioned2015-12-07T22:48:52Z
dc.date.createdJuly 3-7 2006
dc.date.issued2006
dc.date.updated2015-12-07T12:03:08Z
dc.description.abstractThe results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.
dc.identifier.isbn1424404533
dc.identifier.urihttp://hdl.handle.net/1885/26520
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesInternational Conference on Nanoscience and Nanotechnology (ICONN 2006)
dc.sourceProceedings of the 2006 International Conference on Nanoscience and Nanotechnology
dc.subjectKeywords: Crystal growth; Epitaxial growth; Indium arsenide; Molecular beam epitaxy; Nanoscience; Nanotechnology; Optical waveguides; Quantum electronics; Semiconducting indium; Silicon compounds; International conferences; Nanoscience and nanotechnology (NST); Pre Integrated optoelectronic devices; Quantum dots; Selective area epitaxy
dc.titleIntegration of Quantum Dot devices by Selective Area Epitaxy
dc.typeConference paper
local.bibliographicCitation.lastpage445
local.bibliographicCitation.startpage442
local.contributor.affiliationMokkapati, Sudha, College of Engineering and Computer Science, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMcBean, K E, University of Technology Sydney
local.contributor.affiliationPhillips, Matthew R, University of Technology Sydney
local.contributor.authoruidMokkapati, Sudha, u2576041
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020501 - Classical and Physical Optics
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.ariespublicationU4047546xPUB45
local.identifier.doi10.1109/ICONN.2006.340648
local.identifier.scopusID2-s2.0-48749099121
local.type.statusPublished Version

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