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Integration of Quantum Dot devices by Selective Area Epitaxy

Date

Authors

Mokkapati, Sudha

Jagadish, Chennupati

McBean, K. E.

Phillips, Matthew R.

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide.

Keywords

Keywords: Crystal growth; Epitaxial growth; Indium arsenide; Molecular beam epitaxy; Nanoscience; Nanotechnology; Optical waveguides; Quantum electronics; Semiconducting indium; Silicon compounds; International conferences; Nanoscience and nanotechnology (NST); Pre Integrated optoelectronic devices; Quantum dots; Selective area epitaxy

URI

http://hdl.handle.net/1885/26520

Collections

ANU Research Publications

Source

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology

Type

Conference paper

DOI

10.1109/ICONN.2006.340648

Restricted until

2037-12-31

Downloads

File

Description

01_Mokkapati_Integration_of_Quantum_Dot_2006.pdf (135.39 KB)