Can insulating the gates lead us to stable modulation-doped hole quantum devices?
Date
Authors
Waddington, D. E. J.
Burke, Anthony
Fricke, S
Jagadish, Chennupati
Hamilton, Alexander Rudolf
Trunov, K
Reuter, D
Wieck, Andreas Dirk
Micolich, Adam Paul
Tan, Hark Hoe
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IEEE
Abstract
We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of
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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
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2037-12-31