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Can insulating the gates lead us to stable modulation-doped hole quantum devices?

Date

2010

Authors

Waddington, D. E. J.
Burke, Anthony
Fricke, S
Jagadish, Chennupati
Hamilton, Alexander Rudolf
Trunov, K
Reuter, D
Wieck, Andreas Dirk
Micolich, Adam Paul
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of

Description

Keywords

Keywords: AlGaAs/GaAs; Comparative studies; Device stability; Easy fabrication; Heterostructures; Insulated gate; Modulation-doped; Quantum device; Thin oxide layers; Atomic layer deposition; Heterojunctions; Lead oxide; Microelectronics; Quantum theory; Equipment

Citation

URI

http://hdl.handle.net/1885/83589

Collections

ANU Research Publications

Source

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2010.5699738

Restricted until

2037-12-31

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