Can insulating the gates lead us to stable modulation-doped hole quantum devices?
Date
2010
Authors
Waddington, D. E. J.
Burke, Anthony
Fricke, S
Jagadish, Chennupati
Hamilton, Alexander Rudolf
Trunov, K
Reuter, D
Wieck, Andreas Dirk
Micolich, Adam Paul
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of
Description
Keywords
Keywords: AlGaAs/GaAs; Comparative studies; Device stability; Easy fabrication; Heterostructures; Insulated gate; Modulation-doped; Quantum device; Thin oxide layers; Atomic layer deposition; Heterojunctions; Lead oxide; Microelectronics; Quantum theory; Equipment
Citation
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Source
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Type
Conference paper
Book Title
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Restricted until
2037-12-31