Can insulating the gates lead us to stable modulation-doped hole quantum devices?

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dc.contributor.authorWaddington, D. E. J.en_AU
dc.contributor.authorBurke, Anthonyen_AU
dc.contributor.authorFricke, Sen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorHamilton, Alexander Rudolfen_AU
dc.contributor.authorTrunov, Ken_AU
dc.contributor.authorReuter, Den_AU
dc.contributor.authorWieck, Andreas Dirken_AU
dc.contributor.authorMicolich, Adam Paulen_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialCanberra, ACT
dc.date.accessioned2015-12-13T22:59:03Z
dc.date.createdDecember 12-15 2010
dc.date.issued2010
dc.date.updated2016-02-24T08:39:45Z
dc.description.abstractWe have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/83589
dc.publisherIEEE
dc.relation.ispartofseries2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
dc.sourceConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
dc.subjectKeywords: AlGaAs/GaAs; Comparative studies; Device stability; Easy fabrication; Heterostructures; Insulated gate; Modulation-doped; Quantum device; Thin oxide layers; Atomic layer deposition; Heterojunctions; Lead oxide; Microelectronics; Quantum theory; Equipment
dc.titleCan insulating the gates lead us to stable modulation-doped hole quantum devices?
dc.typeConference paper
local.bibliographicCitation.lastpage200
local.bibliographicCitation.startpage199
local.contributor.affiliationWaddington, D. E. J., University of New South Wales
local.contributor.affiliationBurke, Anthony, University of New South Wales
local.contributor.affiliationFricke, S, University of New South Wales
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationHamilton, Alexander Rudolf, University of New South Wales
local.contributor.affiliationTrunov, K, Ruhr-Universität Bochum,
local.contributor.affiliationReuter, D, Ruhr-Universitat Bochum
local.contributor.affiliationWieck, Andreas Dirk, Ruhr University of Bochum
local.contributor.affiliationMicolich, Adam Paul, University of New South Wales
local.contributor.authoremailu9302338@anu.edu.au
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.absfor100700 - NANOTECHNOLOGY
local.identifier.ariespublicationf5625xPUB11878
local.identifier.doi10.1109/COMMAD.2010.5699738
local.identifier.scopusID2-s2.0-79951745046
local.identifier.uidSubmittedByf5625
local.type.statusPublished Version

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