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Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation

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dc.contributor.authorLee, Yu-Heng (Jaret)en_AU
dc.contributor.authorLi, Zheen_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorParkinson, Patricken_AU
dc.contributor.authorVora, Kaushalen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialMelbourne Australia
dc.date.accessioned2015-12-10T22:56:35Z
dc.date.createdDecember 12-14 2012
dc.date.issued2012
dc.date.updated2016-02-24T10:19:34Z
dc.description.abstractSemiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.
dc.identifier.isbn9781467330459
dc.identifier.urihttp://hdl.handle.net/1885/60293
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
dc.sourceCOMMAD 2012 Proceedings
dc.source.urihttp://commad2012.physics.unimelb.edu.au/
dc.subjectKeywords: Fill factor; Gaas nanowires; GaAs solar cells; High quality; Semiconductor nanowire; Surface passivation; Total power; Aluminum gallium arsenide; Gallium arsenide; Microelectronics; Nanowires; Open circuit voltage; Semiconducting gallium; Solar cells; Nan
dc.titleImproved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation
dc.typeConference paper
local.bibliographicCitation.lastpage132
local.bibliographicCitation.startpage131
local.contributor.affiliationLee, Yu-Heng (Jaret), College of Engineering and Computer Science, ANU
local.contributor.affiliationLi, Zhe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationParkinson, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationVora, Kaushal, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidLee, Yu-Heng (Jaret), u4709655
local.contributor.authoruidLi, Zhe, u4980292
local.contributor.authoruidFu, Lan, u9715386
local.contributor.authoruidParkinson, Patrick, u4869537
local.contributor.authoruidVora, Kaushal, u4734923
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB532
local.identifier.doi10.1109/COMMAD.2012.6472395
local.identifier.scopusID2-s2.0-84875590289
local.type.statusPublished Version

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