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Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation

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Date

2012

Authors

Lee, Yu-Heng (Jaret)
Li, Zhe
Fu, Lan
Parkinson, Patrick
Vora, Kaushal
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.

Description

Keywords

Keywords: Fill factor; Gaas nanowires; GaAs solar cells; High quality; Semiconductor nanowire; Surface passivation; Total power; Aluminum gallium arsenide; Gallium arsenide; Microelectronics; Nanowires; Open circuit voltage; Semiconducting gallium; Solar cells; Nan

Citation

URI

http://hdl.handle.net/1885/60293

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472395

Restricted until

2037-12-31

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Description
01_Lee_Improved_GaAs_Nanorwire_solar_2012.pdf (213.87 KB)

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