Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Electrical properties of Si-XII and Si-III formed by nanoindentation

dc.contributor.authorWang, Yu
dc.contributor.authorRuffell, Simon
dc.contributor.authorStewart Sears, Kalista
dc.contributor.authorKnights, Andrew P
dc.contributor.authorBradby, Jodie
dc.contributor.authorWilliams, James
dc.coverage.spatialCanberra Australia
dc.date.accessioned2015-12-10T22:20:27Z
dc.date.createdDecember 12-15 2010
dc.date.issued2010
dc.date.updated2016-02-24T10:01:23Z
dc.description.abstractConventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/51922
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010)
dc.source2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.source.urihttp://commad2010.anu.edu.au/
dc.subjectKeywords: Diamond cubic phase; Electrical measurement; Electrical property; Narrow band gap; Room temperature; Semi-metals; Silicon devices; Theoretical study; Boron; Electric properties; Metastable phases; Microelectronics; Nanoindentation; Phosphorus; Semiconduct
dc.titleElectrical properties of Si-XII and Si-III formed by nanoindentation
dc.typeConference paper
local.bibliographicCitation.lastpage106
local.bibliographicCitation.startpage105
local.contributor.affiliationWang, Yu, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationStewart Sears, Kalista, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKnights, Andrew P, McMaster University
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidWang, Yu, u4880023
local.contributor.authoruidRuffell, Simon, u4241699
local.contributor.authoruidStewart Sears, Kalista, u4003253
local.contributor.authoruidBradby, Jodie, u9908195
local.contributor.authoruidWilliams, James, u8809701
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationU3488905xPUB235
local.identifier.doi10.1109/COMMAD.2010.5699682
local.identifier.scopusID2-s2.0-79951751345
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
01_Wang_Electrical_properties_of_2010.pdf
Size:
395.83 KB
Format:
Adobe Portable Document Format