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Electrical properties of Si-XII and Si-III formed by nanoindentation

Date

Authors

Wang, Yu

Ruffell, Simon

Stewart Sears, Kalista

Knights, Andrew P

Bradby, Jodie

Williams, James

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Conventional silicon devices and integrated circuits are fabricated in the diamond cubic phase of silicon, so-called Si-I. Other phases of silicon can be formed under pressure applied by indentation and these phases are metastable at room-temperature and

Keywords

Keywords: Diamond cubic phase; Electrical measurement; Electrical property; Narrow band gap; Room temperature; Semi-metals; Silicon devices; Theoretical study; Boron; Electric properties; Metastable phases; Microelectronics; Nanoindentation; Phosphorus; Semiconduct

URI

http://hdl.handle.net/1885/51922

Collections

ANU Research Publications

Source

2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

DOI

10.1109/COMMAD.2010.5699682

Restricted until

2037-12-31

Downloads

File

Description

01_Wang_Electrical_properties_of_2010.pdf (395.83 KB)