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Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation

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Date

2006

Authors

Lloyd-Hughes, J
Castro-Camus, E
Fraser, Michael
Jagadish, Chennupati
Johnston, Michael B
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Optical Society of America

Abstract

The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.

Description

Keywords

Keywords: Civil aviation; Electron optics; Ions; Lasers; Optical pumping; Quantum electronics; Carrier dynamics; Ion damages; Life-times; Lifetime measurements; Optical-; Semi-conductors; Spectral widths; Subpicosecond; Terahertz; Terahertz emissions; Terahertz emi

Citation

URI

http://hdl.handle.net/1885/21162

Collections

ANU Research Publications

Source

Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science: Conference on Photonic Applications, Systems and Technologies: Technical Digest CD-ROM

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/CLEO.2006.4628606

Restricted until

2037-12-31

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01_Lloyd-Hughes_Terahertz_Emission_and_2006.pdf (103.13 KB)

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