Lanthanum distribution and dielectric properties of intergrowth Bi₅ˍₓLaₓTiNbWO₁₅ ferroelectrics
| dc.contributor.author | Yi, Z. G. | |
| dc.contributor.author | Li, Y. X. | |
| dc.contributor.author | Zeng, J. T. | |
| dc.contributor.author | Yang, Q. B. | |
| dc.contributor.author | Wang, D. | |
| dc.contributor.author | Lu, Y. Q. | |
| dc.contributor.author | Yin, Q. R. | |
| dc.date.accessioned | 2015-11-26T02:38:24Z | |
| dc.date.available | 2015-11-26T02:38:24Z | |
| dc.date.issued | 2005-11-08 | |
| dc.description.abstract | Bi₅ˍₓLaₓTiNbWO₁₅ (x=0–1.50)ceramics prepared by conventional solid-state reaction were studied using x-ray diffraction(XRD),dielectric spectroscopy and Raman scattering techniques. The XRD analysis implied that single-phase intergrowth bismuth layered perovskite structure was obtained for all the samples and when x=0.75, the Bi³⁺ in (Bi₂O₂)²⁺ layer begins to be substituted by La³⁺. The dielectric spectra showed that, when Bi³⁺ in (Bi₂O₂)²⁺ is substituted, the Curie temperature becomes diffusive and the dielectricpermittivity at room temperature is increased in a wide frequency range. Especially when x=1.50, the dielectricpermittivity reaches its maximum of 270, nearly two times larger than that of the La3+ undoped sample. The Raman scattering experiments evidenced further that Bi³⁺ in (Bi₂O₂)²⁺ is substituted when x⩾0.75 and revealed the orthorhombic distortion of the octahedra is responsible for the increase of the dielectricpermittivity at x⩾1.25. | en_AU |
| dc.description.sponsorship | This work was supported by the Ministry of Science and Technology of China through 973-Project under Grant No. 2002CB613307. | en_AU |
| dc.identifier.issn | 0003-6951 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/16825 | |
| dc.publisher | American Institute of Physics (AIP) | en_AU |
| dc.rights | http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 26/11/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2132077 | en_AU |
| dc.source | Applied Physics Letters | en_AU |
| dc.title | Lanthanum distribution and dielectric properties of intergrowth Bi₅ˍₓLaₓTiNbWO₁₅ ferroelectrics | en_AU |
| dc.type | Journal article | en_AU |
| local.bibliographicCitation.issue | 20 | en_AU |
| local.bibliographicCitation.startpage | 202901 | en_AU |
| local.contributor.affiliation | Yi, Zhiguo, College of Physical and Mathematical Sciences, CPMS Research School of Chemistry, RSC General, The Australian National University | en_AU |
| local.contributor.affiliation | Li, Y X, Chinese Academy of Sciences, China | en_AU |
| local.contributor.affiliation | Zeng, J T, Chinese Academy of Sciences, China | en_AU |
| local.contributor.affiliation | Yang, Q B, Chinese Academy of Sciences, China | en_AU |
| local.contributor.affiliation | Wang, Dezu, Chinese Academy of Sciences , China | en_AU |
| local.contributor.affiliation | Lu, Yang, Chinese Academy of Sciences , China | en_AU |
| local.contributor.affiliation | Yin, Q R, Chinese Academy of Sciences, China | en_AU |
| local.contributor.authoruid | u4610857 | en_AU |
| local.description.notes | Imported from ARIES. At the time of publication the author Z. G. Yi was affiliated with State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, China | en_AU |
| local.identifier.absfor | 030206 | en_AU |
| local.identifier.ariespublication | u4217927xPUB480 | en_AU |
| local.identifier.citationvolume | 87 | en_AU |
| local.identifier.doi | 10.1063/1.2132077 | en_AU |
| local.publisher.url | https://www.aip.org/ | en_AU |
| local.type.status | Published Version | en_AU |