Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

Simple item page
dc.contributor.authorDavis, Jeff Aen_AU
dc.contributor.authorDao, Lap Vanen_AU
dc.contributor.authorWen, Xen_AU
dc.contributor.authorTicknor, Cen_AU
dc.contributor.authorHannaford, Peteren_AU
dc.contributor.authorColeman, Victoria Aen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorKoike, Kazutoen_AU
dc.contributor.authorSasa, Shigehikoen_AU
dc.contributor.authorInoue, Masatakaen_AU
dc.contributor.authorYano, Mitsuakien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-08T22:26:15Z
dc.date.available2015-12-08T22:26:15Z
dc.date.issued2008
dc.date.updated2015-12-08T09:10:25Z
dc.description.abstractStrong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations.
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/33603
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.subjectKeywords: Band structure; Electric field effects; Interfaces (materials); Ion implantation; Photoluminescence; Rapid thermal annealing; Zinc oxide; Electron-hole wavefunction overlap; Exciton lifetime; Oscillator strength; Stark shift; Semiconductor quantum wells;
dc.titleSuppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing
dc.typeJournal article
local.bibliographicCitation.issue5
local.bibliographicCitation.lastpage4
local.bibliographicCitation.startpage1
local.contributor.affiliationDavis, Jeff A, Swinburne University of Technology
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology
local.contributor.affiliationWen, X, Swinburne University of Technology
local.contributor.affiliationTicknor, C, Swinburne University of Technology
local.contributor.affiliationHannaford, Peter, Swinburne University of Technology
local.contributor.affiliationColeman, Victoria A, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKoike, Kazuto, Osaka Institute of Technology
local.contributor.affiliationSasa, Shigehiko, Osaka Institute of Technology
local.contributor.affiliationInoue, Masataka, Osaka Institute of Technology
local.contributor.affiliationYano, Mitsuaki, Osaka Institute of Technology
local.contributor.authoruidColeman, Victoria A, u4014712
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationu3488905xPUB104
local.identifier.citationvolume19
local.identifier.doi10.1088/0957-4484/19/05/055205
local.identifier.scopusID2-s2.0-38349000729
local.identifier.thomsonID000252967100005
local.type.statusPublished Version

Downloads

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS