Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

Thumbnail Image

Date

2008

Authors

Davis, Jeff A
Dao, Lap Van
Wen, X
Ticknor, C
Hannaford, Peter
Coleman, Victoria A
Jagadish, Chennupati
Koike, Kazuto
Sasa, Shigehiko
Inoue, Masataka

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations.

Description

Keywords

Keywords: Band structure; Electric field effects; Interfaces (materials); Ion implantation; Photoluminescence; Rapid thermal annealing; Zinc oxide; Electron-hole wavefunction overlap; Exciton lifetime; Oscillator strength; Stark shift; Semiconductor quantum wells;

Citation

URI

http://hdl.handle.net/1885/33603

Collections

ANU Research Publications

Source

Nanotechnology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0957-4484/19/05/055205

Restricted until

DSpace software copyright © 2002-2026 LYRASIS