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EXAFS Measurements of Metal-decorated Nanocavities in Si

dc.contributor.authorde Azevedo, Gustavo
dc.contributor.authorRidgway, Mark C
dc.contributor.authorBetlehem, J
dc.contributor.authorYu, Kin Man
dc.contributor.authorGlover, C J
dc.contributor.authorForan, Garry J
dc.date.accessioned2015-12-13T23:08:08Z
dc.date.available2015-12-13T23:08:08Z
dc.date.issued2003
dc.date.updated2015-12-12T08:12:23Z
dc.description.abstractThe metal-decorated nanocavities in Si were discussed using EXAFS measurements. A sample preparation methodology to enable the identification with synchrotron radiation-based analytical techniques, of the gettering sites of metallic impurities on the internal walls of implantation-induced nanocavities in Si substrates was elaborated. The preliminary results for the Cu-Si and Cu-Cu bond lengths on the internal surface of the nanocavities were also presented.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/86537
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Chemical bonds; Copper compounds; Crystal impurities; Nanostructured materials; Synchrotron radiation; X ray analysis; Nanocavities; Silicon Cavities; EXAFS; Gettering; Silicon; Voids
dc.titleEXAFS Measurements of Metal-decorated Nanocavities in Si
dc.typeJournal article
local.bibliographicCitation.lastpage184
local.bibliographicCitation.startpage179
local.contributor.affiliationde Azevedo, Gustavo, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBetlehem, J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory
local.contributor.affiliationGlover, C J, Uppsala University
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.authoruidde Azevedo, Gustavo, u4047534
local.contributor.authoruidRidgway, Mark C, u9001886
local.contributor.authoruidBetlehem, J, u4016717
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub15445
local.identifier.citationvolume199
local.identifier.doi10.1016/S0168-583X(02)01430-1
local.identifier.scopusID2-s2.0-0037244293
local.type.statusPublished Version

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