Threshold current reduction for the metal-insulator transition in NbO<inf>2-x</inf>-selector devices: The effect of ReRAM integration
| dc.contributor.author | Nandi, Sanjoy | |
| dc.contributor.author | Liu, Xinjun | |
| dc.contributor.author | Venkatachalam, Dinesh | |
| dc.contributor.author | Elliman, Robert | |
| dc.date.accessioned | 2015-12-13T22:16:25Z | |
| dc.date.issued | 2015 | |
| dc.date.updated | 2015-12-11T07:26:06Z | |
| dc.description.abstract | The threshold current for inducing the metal-insulator transition in a NbO<inf>2-x</inf> selector element is shown to be affected by the properties of an adjacent memory element when integrated into a hybrid selector-memory device structure. Experimental | |
| dc.identifier.issn | 0022-3727 | |
| dc.identifier.uri | http://hdl.handle.net/1885/70857 | |
| dc.publisher | Institute of Physics Publishing | |
| dc.source | Journal of Physics D: Applied Physics | |
| dc.title | Threshold current reduction for the metal-insulator transition in NbO<inf>2-x</inf>-selector devices: The effect of ReRAM integration | |
| dc.type | Journal article | |
| local.bibliographicCitation.issue | 19 | |
| local.bibliographicCitation.lastpage | 8 | |
| local.bibliographicCitation.startpage | 1 | |
| local.contributor.affiliation | Nandi, Sanjoy, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.affiliation | Liu, Xinjun, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.affiliation | Venkatachalam, Dinesh, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.affiliation | Elliman, Robert, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.authoruid | Nandi, Sanjoy, u4939839 | |
| local.contributor.authoruid | Liu, Xinjun, u5361480 | |
| local.contributor.authoruid | Venkatachalam, Dinesh, u4575027 | |
| local.contributor.authoruid | Elliman, Robert, u9012877 | |
| local.description.embargo | 2037-12-31 | |
| local.description.notes | Imported from ARIES | |
| local.identifier.absfor | 100712 - Nanoscale Characterisation | |
| local.identifier.absfor | 020400 - CONDENSED MATTER PHYSICS | |
| local.identifier.absfor | 100705 - Nanoelectronics | |
| local.identifier.ariespublication | a383154xPUB2445 | |
| local.identifier.citationvolume | 48 | |
| local.identifier.doi | 10.1088/0022-3727/48/19/195105 | |
| local.identifier.scopusID | 2-s2.0-84927603594 | |
| local.type.status | Published Version |
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