Threshold current reduction for the metal-insulator transition in NbO<inf>2-x</inf>-selector devices: The effect of ReRAM integration
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Nandi, Sanjoy
Liu, Xinjun
Venkatachalam, Dinesh
Elliman, Robert
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Institute of Physics Publishing
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The threshold current for inducing the metal-insulator transition in a NbO<inf>2-x</inf> selector element is shown to be affected by the properties of an adjacent memory element when integrated into a hybrid selector-memory device structure. Experimental
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Journal of Physics D: Applied Physics
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2037-12-31
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