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Single-step RIE fabrication process of low loss InP waveguide using CH 4 /H 2 chemistry

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dc.contributor.authorLysevych, Mykhayloen_AU
dc.contributor.authorKarouta, Fouaden_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-10T23:22:24Z
dc.date.issued2011
dc.date.updated2016-02-24T08:12:09Z
dc.description.abstractSingle-step C H4 / H2 -based reactive ion etching (RIE) process, without alternating O2 plasma treatment, has been developed with virtually no polymer buildup on the etched surface. InP ridge waveguides up to 1.9 μm high were etched without any mid- or p
dc.identifier.issn0013-4651
dc.identifier.urihttp://hdl.handle.net/1885/66502
dc.publisherElectrochemical Society Inc
dc.sourceJournal of the Electrochemical Society
dc.subjectKeywords: Etched surface; Fabrication process; InP; Low loss; Plasma treatment; Ridge waveguides; Root mean square roughness; Single-step; Waveguide propagation; Electric losses; Plasma applications; Waveguides; Reactive ion etching
dc.titleSingle-step RIE fabrication process of low loss InP waveguide using CH 4 /H 2 chemistry
dc.typeJournal article
local.bibliographicCitation.issue3
local.bibliographicCitation.lastpageH284
local.bibliographicCitation.startpageH281
local.contributor.affiliationLysevych, Mykhaylo, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKarouta, Fouad, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidLysevych, Mykhaylo, u4185056
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidKarouta, Fouad, u4703981
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020105 - General Relativity and Gravitational Waves
local.identifier.ariespublicationf2965xPUB1295
local.identifier.citationvolume158
local.identifier.doi10.1149/1.3532767
local.identifier.scopusID2-s2.0-79551576696
local.identifier.thomsonID000286677900079
local.type.statusPublished Version

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