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Single-step RIE fabrication process of low loss InP waveguide using CH 4 /H 2 chemistry

Date

Authors

Lysevych, Mykhaylo

Karouta, Fouad

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Electrochemical Society Inc

Abstract

Single-step C H4 / H2 -based reactive ion etching (RIE) process, without alternating O2 plasma treatment, has been developed with virtually no polymer buildup on the etched surface. InP ridge waveguides up to 1.9 μm high were etched without any mid- or p

Keywords

Keywords: Etched surface; Fabrication process; InP; Low loss; Plasma treatment; Ridge waveguides; Root mean square roughness; Single-step; Waveguide propagation; Electric losses; Plasma applications; Waveguides; Reactive ion etching

URI

http://hdl.handle.net/1885/66502

Collections

ANU Research Publications

Source

Journal of the Electrochemical Society

Type

Journal article

DOI

10.1149/1.3532767

Restricted until

2037-12-31

Downloads

File

Description

01_Lysevych_Single-step_RIE_fabrication_2011.pdf (947.26 KB)

02_Lysevych_Single-step_RIE_fabrication_2011.pdf (280.62 KB)