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Controlling the properties of InGaAs quantum dots by selective-area epitaxy

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dc.contributor.authorMokkapati, S.en_AU
dc.contributor.authorLever, P.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorMcBean, K. E.en_AU
dc.contributor.authorPhillips, M. R.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-09-29T06:34:50Z
dc.date.available2015-09-29T06:34:50Z
dc.date.issued2005-03-08
dc.date.updated2015-12-11T11:09:57Z
dc.description.abstractSelective growth of InGaAsquantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots.Atomic force microscopy and cathodoluminescence are used for characterization of the selectively growndots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAsquantum well and InGaAsquantum dots on the same wafer is demonstrated. By using a single-step growth,dots luminescing at different wavelengths, in the range 1150–1230nm, in different parts of the same wafer are achieved.
dc.description.sponsorshipThe Australian Research Council is gratefully acknowledged for the financial support.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15730
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 29/09/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Mokkapati, S., et al. "Controlling the properties of InGaAs quantum dots by selective-area epitaxy." Applied Physics Letters 86.11 (2005): 113102.) and may be found at https://doi.org/10.1063/1.1875745
dc.sourceApplied Physics Letters
dc.subjectKeywords: Atomic force microscopy; Band structure; Cathodoluminescence; Epitaxial growth; Integrated circuits; Masks; Semiconducting indium gallium arsenide; Semiconductor quantum wells; Substrates; Bandgap energy control; Mask dimensions; Photonic integrated circu
dc.titleControlling the properties of InGaAs quantum dots by selective-area epitaxy
dc.typeJournal article
local.bibliographicCitation.issue11en_AU
local.bibliographicCitation.startpage113102en_AU
local.contributor.affiliationMokkapati, Sudha, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationLever McGowan, Penelope, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationMcBean, K E, University of Technology Sydney, Australiaen_AU
local.contributor.affiliationPhillips, Matthew R, University of Technology Sydney, Australiaen_AU
local.contributor.authoruidu2576041en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor100799en_AU
local.identifier.absfor020405en_AU
local.identifier.absfor020501en_AU
local.identifier.ariespublicationMigratedxPub10751en_AU
local.identifier.citationvolume86en_AU
local.identifier.doi10.1063/1.1875745en_AU
local.identifier.scopusID2-s2.0-17944371240
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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