Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Abstract

Selective growth of InGaAsquantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots.Atomic force microscopy and cathodoluminescence are used for characterization of the selectively growndots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAsquantum well and InGaAsquantum dots on the same wafer is demonstrated. By using a single-step growth,dots luminescing at different wavelengths, in the range 1150–1230nm, in different parts of the same wafer are achieved. Show more