Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation

Simple item page
dc.contributor.authorLi, Zheng Feng
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorConway, Martin
dc.contributor.authorChivers, D
dc.contributor.authorFitz Gerald, John
dc.contributor.authorWilliams, James
dc.date.accessioned2015-12-13T23:34:51Z
dc.date.issued1999
dc.date.updated2015-12-12T09:37:45Z
dc.description.abstractIon implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si3N4 stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si3N4. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide considerable insight into M-Si3N4 formed by another non-equilibrium mixing process, namely reactive ball milling or mechanochemistry.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93644
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Mechanochemistry; Amorphous films; Amorphous silicon; Annealing; Ball milling; Crystal defects; Crystallization; Ion implantation; Iron; Nitrogen; Semiconducting silicon compounds; Silicon nitride; Stoichiometry; Semiconducting films Ball-milling; Defects; Ion-implantation; Silicon nitride
dc.titleThe Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
dc.typeJournal article
local.bibliographicCitation.lastpage539
local.bibliographicCitation.startpage534
local.contributor.affiliationLi, Zheng Feng, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationConway, Martin, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationChivers, D, AEA Technology
local.contributor.affiliationFitz Gerald, John, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidLi, Zheng Feng, u4024853
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.contributor.authoruidDeenapanray, Prakash, u4018937
local.contributor.authoruidConway, Martin, u9300106
local.contributor.authoruidFitz Gerald, John, u8001315
local.contributor.authoruidWilliams, James, u8809701
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub25030
local.identifier.citationvolume148
local.identifier.scopusID2-s2.0-0033513697
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Li_The_Role_of_Fe_on_the_1999.pdf
Size:
233.31 KB
Format:
Adobe Portable Document Format
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS