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The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation

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Date

1999

Authors

Li, Zheng Feng
Wong-Leung, Jennifer
Deenapanray, Prakash
Conway, Martin
Chivers, D
Fitz Gerald, John
Williams, James

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Ion implantation into Si has been used to produce near-surface, amorphous Si-N layers with the nitrogen content both below and exceeding Si3N4 stoichiometry. Iron has been introduced into some of these layers to study the effect of Fe on subsequent crystallisation to α-Si3N4. Rutherford backscattering and channeling, X-ray diffraction and cross-sectional transmission electron microscopy have been used to analyse these implanted samples before and after annealing to 1000°C. These results provide considerable insight into M-Si3N4 formed by another non-equilibrium mixing process, namely reactive ball milling or mechanochemistry.

Description

Keywords

Keywords: Mechanochemistry; Amorphous films; Amorphous silicon; Annealing; Ball milling; Crystal defects; Crystallization; Ion implantation; Iron; Nitrogen; Semiconducting silicon compounds; Silicon nitride; Stoichiometry; Semiconducting films Ball-milling; Defects; Ion-implantation; Silicon nitride

Citation

URI

http://hdl.handle.net/1885/93644

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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