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Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates

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dc.contributor.authorDarby, B.L.
dc.contributor.authorYates, B.R.
dc.contributor.authorKumar, Ashish
dc.contributor.authorKontos, A.
dc.contributor.authorElliman, Robert
dc.contributor.authorJones, K S
dc.date.accessioned2015-12-13T22:56:43Z
dc.date.issued2013
dc.date.updated2016-02-24T08:37:58Z
dc.description.abstractModeling the two-dimensional (2D) solid phase epitaxial growth (SPEG) of amorphized Ge has become important due to the renewed interest in Ge as an alternative material in complementary metal-oxide-semiconductor (CMOS) devices. No one has modeled the two-
dc.identifier.issn2162-8769
dc.identifier.urihttp://hdl.handle.net/1885/82914
dc.publisherThe Electrochemical Society
dc.sourceECS Journal of Solid State Science and Technology
dc.subjectKeywords: Alternative materials; Complementary metal oxide semiconductors; Crystallographic orientations; Level-set techniques; Object oriented; Orientation dependence; Patterned materials; Solid phase epitaxial growth; Defects; Epitaxial growth; Silicon alloys; Tw
dc.titleModeling Solid Phase Epitaxial Growth for Patterned Ge Substrates
dc.typeJournal article
local.bibliographicCitation.issue4
local.bibliographicCitation.lastpage759
local.bibliographicCitation.startpage753
local.contributor.affiliationDarby, B.L., University of Florida
local.contributor.affiliationYates, B.R., University of Florida
local.contributor.affiliationKumar, Ashish, University of Florida
local.contributor.affiliationKontos, A., Applied Materials
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJones, K S , University of Florida
local.contributor.authoruidElliman, Robert, u9012877
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091207 - Metals and Alloy Materials
local.identifier.absfor100712 - Nanoscale Characterisation
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB11112
local.identifier.citationvolume2
local.identifier.doi10.1149/05009.0753ecst
local.identifier.scopusID2-s2.0-84885772490
local.type.statusPublished Version

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