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Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates

Date

Authors

Darby, B.L.

Yates, B.R.

Kumar, Ashish

Kontos, A.

Elliman, Robert

Jones, K S

Publisher

The Electrochemical Society

Abstract

Modeling the two-dimensional (2D) solid phase epitaxial growth (SPEG) of amorphized Ge has become important due to the renewed interest in Ge as an alternative material in complementary metal-oxide-semiconductor (CMOS) devices. No one has modeled the two-

Keywords

Keywords: Alternative materials; Complementary metal oxide semiconductors; Crystallographic orientations; Level-set techniques; Object oriented; Orientation dependence; Patterned materials; Solid phase epitaxial growth; Defects; Epitaxial growth; Silicon alloys; Tw

URI

http://hdl.handle.net/1885/82914

Collections

ANU Research Publications

Source

ECS Journal of Solid State Science and Technology

Type

Journal article

DOI

10.1149/05009.0753ecst

Restricted until

2037-12-31

Downloads

File

Description

01_Darby_Modeling_Solid_Phase_Epitaxial_2013.pdf (744.12 KB)