Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates
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Darby, B.L.
Yates, B.R.
Kumar, Ashish
Kontos, A.
Elliman, Robert
Jones, K S
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Volume Title
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The Electrochemical Society
Abstract
Modeling the two-dimensional (2D) solid phase epitaxial growth (SPEG) of amorphized Ge has become important due to the renewed interest in Ge as an alternative material in complementary metal-oxide-semiconductor (CMOS) devices. No one has modeled the two-
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ECS Journal of Solid State Science and Technology
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2037-12-31
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