Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates

Date

Authors

Darby, B.L.
Yates, B.R.
Kumar, Ashish
Kontos, A.
Elliman, Robert
Jones, K S

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Publisher

The Electrochemical Society

Abstract

Modeling the two-dimensional (2D) solid phase epitaxial growth (SPEG) of amorphized Ge has become important due to the renewed interest in Ge as an alternative material in complementary metal-oxide-semiconductor (CMOS) devices. No one has modeled the two-

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ECS Journal of Solid State Science and Technology

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Restricted until

2037-12-31