Visualization of the internal structure of orientation-patterned III-V semiconductors

Karpinski, Pawel; Chen, Xin; Shvedov, Vladlen; Hnatovsky, Kyrylo (Cyril); Grisard, Arnaud; Lallier, Eric; Luther-Davies, Barry; Sheng, Yan; Krolikowski, Wieslaw

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Visualization of the internal structure of orientation-patterned III-V semiconductors

Date

2015

Authors

Karpinski, Pawel

Chen, Xin

Shvedov, Vladlen

Hnatovsky, Kyrylo (Cyril)

Grisard, Arnaud

Lallier, Eric

Luther-Davies, Barry

Sheng, Yan

Krolikowski, Wieslaw

Publisher

IEEE

Abstract

We investigate nonlinear diffraction in orientation-patterned semiconductors and identify Čerenkov second harmonic generation in a transverse geometry of interaction. Čerenkov second harmonic allows nondestructive 3D visualization of the internal structure of orientationpatterned semiconductor.