Accurate defect recombination parameters: What are the limitations of current analyses?
dc.contributor.author | Rougieux, Fiacre E | |
dc.contributor.author | Sun, Ryan | |
dc.contributor.author | Zhu, Yan | |
dc.contributor.author | Macdonald, Daniel | |
dc.coverage.spatial | Waikoloa Village, USA | |
dc.date.accessioned | 2022-11-28T01:17:34Z | |
dc.date.created | June 10-15 2018 | |
dc.date.issued | 2018 | |
dc.date.updated | 2021-11-28T07:29:41Z | |
dc.description.abstract | A key strategy for further reducing the cost of solar electricity is through the development of very-high efficiency silicon solar cells (>27%). The challenge in achieving this goal lies in overcoming limitations imposed by the electronic quality of the silicon wafers themselves. To overcome this challenge, there is an urgent need for a refined understanding of defects limiting the electronic quality of silicon wafers. This paper provides a nuanced and detailed picture what constitutes accurate recombination parameters for defects in silicon. It outlines three widespread issues in existing measurements of recombination parameters. It enables robust simulation of the lifetime in silicon for solar cell applications. | en_AU |
dc.description.sponsorship | This work has been supported by the Australian Research Council (ARC) Discovery Early Career Researcher Fellowship program. | en_AU |
dc.format.mimetype | application/pdf | en_AU |
dc.identifier.isbn | 9781538685297 | en_AU |
dc.identifier.uri | http://hdl.handle.net/1885/280446 | |
dc.language.iso | en_AU | en_AU |
dc.publisher | IEEE | en_AU |
dc.relation.ispartofseries | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 | en_AU |
dc.rights | © 2018 IEEE | en_AU |
dc.source | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC | en_AU |
dc.subject | Recombination | en_AU |
dc.subject | multivalent | en_AU |
dc.subject | defect | en_AU |
dc.subject | flaws | en_AU |
dc.subject | Deep Level Transient Spectroscopy | en_AU |
dc.subject | Temperature and Injection Dependent Lifetime Spectroscopy | en_AU |
dc.title | Accurate defect recombination parameters: What are the limitations of current analyses? | en_AU |
dc.type | Conference paper | en_AU |
local.bibliographicCitation.lastpage | 2523 | en_AU |
local.bibliographicCitation.startpage | 2520 | en_AU |
local.contributor.affiliation | Rougieux, Fiacre E, University of New South Wales | en_AU |
local.contributor.affiliation | Sun, Ryan, College of Engineering and Computer Science, ANU | en_AU |
local.contributor.affiliation | Zhu, Yan, University of New South Wales | en_AU |
local.contributor.affiliation | MacDonald, Daniel, College of Engineering and Computer Science, ANU | en_AU |
local.contributor.authoremail | u5408594@anu.edu.au | en_AU |
local.contributor.authoruid | Sun, Ryan, u5408594 | en_AU |
local.contributor.authoruid | MacDonald, Daniel, u9718154 | en_AU |
local.description.embargo | 2099-12-31 | |
local.description.notes | Imported from ARIES | en_AU |
local.description.refereed | Yes | |
local.identifier.absfor | 400909 - Photonic and electro-optical devices, sensors and systems (excl. communications) | en_AU |
local.identifier.absseo | 170804 - Solar-photovoltaic energy | en_AU |
local.identifier.ariespublication | u3102795xPUB194 | en_AU |
local.identifier.doi | 10.1109/PVSC.2018.8547585 | en_AU |
local.identifier.scopusID | 2-s2.0-85059890257 | |
local.identifier.uidSubmittedBy | u3102795 | en_AU |
local.publisher.url | https://www.ieee.org/ | en_AU |
local.type.status | Published Version | en_AU |
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